Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6211849
Kind Code:
B2
Abstract:
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided. Oxide semiconductor films are stacked so that the conduction band has a well-shaped structure. Specifically, a transistor having a multi-layer structure is manufactured in which a second oxide semiconductor film having a crystalline structure is stacked over a first oxide semiconductor film, and at least a third oxide semiconductor film is provided over the second oxide semiconductor film. When a buried channel is formed in the transistor, few oxygen vacancies are generated and the reliability of the transistor is improved.
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Inventors:
Shunpei Yamazaki
Application Number:
JP2013163808A
Publication Date:
October 11, 2017
Filing Date:
August 07, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; C23C14/08; G02F1/1368; H01L21/336; H01L21/363; H01L21/8234; H01L21/8242; H01L27/088; H01L27/10; H01L27/108
Domestic Patent References:
| JP2012134475A | ||||
| JP2012084851A | ||||
| JP2012151461A | ||||
| JP2012151460A | ||||
| JP2012134467A | ||||
| JP2012054547A | ||||
| JP2011228695A | ||||
| JP2011228689A | ||||
| JP2011138934A |
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