Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6226518
Kind Code:
B2
Abstract:
To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.
Inventors:
Takayuki Naga
Koshioka Shunsuke
Masatoshi Yokoyama
Shunpei Yamazaki
Koshioka Shunsuke
Masatoshi Yokoyama
Shunpei Yamazaki
Application Number:
JP2012227159A
Publication Date:
November 08, 2017
Filing Date:
October 12, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/283; H01L21/336; H01L51/50; H05B33/02; H05B33/14
Domestic Patent References:
| JP2007123861A | ||||
| JP2011129926A | ||||
| JP2010135770A | ||||
| JP2011049297A | ||||
| JP2010147269A |
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