PURPOSE: To take EMI resistant measures by a simple structure without a metal case and a through capacitor.

CONSTITUTION: The surface (an outer part) of a bipolar IC-structured IC circuit section 10 which is to be electromagnetic shielded is covered with a thin film for shielding 14 and a capacitor 17 is formed between an I/O terminal 18 and the thin film for shielding 14. Then, the thin film for shielding 14 is connected to GND (ground) interconnection 19. A semiconductor device 100 is incorporated into a semiconductor IC chip. The outer part of the integrated circuit is kept at the same potential by the thin film for shielding 14 and thereby the integrated circuit is electromagnetic shielded. A high frequency noise is bypassed to the thin film for shielding 14 by the capacitor 17 which is constituted of an interconnection layer 12 and the thin film for shielding 14. In this semiconductor device, EMI resistant measures can be taken by a simple structure.