Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5925249
Kind Code:
A
Abstract:
PURPOSE:To improve the degree of integration as a whole, and to facilitate manufacture by using both P type and N type semiconductor layers as electrodes and forming an electrode wiring connecting to all regions existing in an element by a semiconductor layer. CONSTITUTION:A polycrystalline silicon thin-film 3 is formed to the surface of one conduction type semiconductor substrate 1 coated with an oxide film 2 with an opening, polycrystalline silicon electrode wiring paths 5, 6 isolated by a silicon oxide 4 through selective oxidation treatment are formed, and reverse conduction type impurity atoms are introduced into the semiconductor substrate through a desired electrode section 5 to form a P-N junction 7. Accordingly, the substantially extremely minute semiconductor device can be obtained because three of the P-N junction 7 and the electrode wirings 5, 6 to each N type and P type region keep automatically minimum distances and are arranged relatively.
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Inventors:
SHIBA HIROSHI
Application Number:
JP7121783A
Publication Date:
February 09, 1984
Filing Date:
April 22, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/3205; H01L21/28; H01L21/331; H01L29/72; H01L29/73; H01L29/78; (IPC1-7): H01L21/28; H01L29/72; H01L29/78
Domestic Patent References:
| JPS5119484A | 1976-02-16 |
Attorney, Agent or Firm:
Uchihara Shin