Title:
SEMICONDUCTOR DISK, ITS MANUFACTURING METHOD AND ITS USE
Document Type and Number:
Japanese Patent JP3772088
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor disk which comprises the front, the rear and an epitaxial layer precipitated on the front and formed of a semiconductor material, and to provide its manufacturing method.
SOLUTION: The surface of the epitaxial layer has a maximum density in the center of scattered light of 0.14 per cm2 in a scattering cross section of 0.12 μm or more. The front of the semiconductor disk has a surface roughness of 0.05 to 0.29 nmRMS measured by an AFM on a reference area of 1×1 μm. Its manufacturing method is composed of a removal polishing process (a) as only one polishing process. The method is composed of a process (b) in which the semiconductor disk is cleaned and dried. The method is composed of a process (c) in which the front of the semiconductor disk is pretreated at 950 to 1,250°C in an epitaxial reactor. The method is composed of a process (d) in which the epitaxial layer is precipitated on the front of the pretreated semiconductor disk.
Inventors:
Wolfgang Siebert
Peter Struk
Peter Struk
Application Number:
JP2000379297A
Publication Date:
May 10, 2006
Filing Date:
December 13, 2000
Export Citation:
Assignee:
Siltronic AG
International Classes:
H01L21/205; H01L21/324; C30B23/02; C30B25/02; H01L21/304; (IPC1-7): H01L21/324; H01L21/205; H01L21/304
Domestic Patent References:
| JP11100299A | ||||
| JP11283924A | ||||
| JP8139033A | ||||
| JP10209053A | ||||
| JP6196459A | ||||
| JP8083769A | ||||
| JP10172976A |
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel
Toshiomi Yamazaki
Takuya Kuno
Einzel Felix-Reinhard
Reinhard Einsel
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