Title:
SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3816942
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a technique for forming a nitride semiconductor layer superior in planarity and crystallinity on a GaN substrate while improving manufacturing characteristics of a semiconductor element utilizing a gallium nitride substrate (GaN substrate).
SOLUTION: The gallium nitride substrate 10 whose top surface 10a has an off angle θ of 0.1-1.0° in a <1-100> direction to a (0001) surface is prepared. Then a plurality of nitride semiconductor layers comprising an n-type semiconductor layer 11 are laminated on the top surface 10a of the gallium nitride substrate 10 to form the semiconductor element such as a semiconductor laser, etc.
Inventors:
Akihito Ohno
Takemi Masayoshi
Nobuyuki Tomita
Takemi Masayoshi
Nobuyuki Tomita
Application Number:
JP2005267952A
Publication Date:
August 30, 2006
Filing Date:
September 15, 2005
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/205; H01L33/16; H01L33/32; H01S5/323
Domestic Patent References:
| JP2000082676A | ||||
| JP2004146420A | ||||
| JP2004104089A | ||||
| JP2003327497A | ||||
| JP2001322899A | ||||
| JP2004327655A | ||||
| JP2003069156A | ||||
| JP2004035360A |
Attorney, Agent or Firm:
Shigeaki Yoshida
Yoshitake Hidetoshi
Takahiro Arita
Yoshitake Hidetoshi
Takahiro Arita