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Title:
半導体装置及び電子機器
Document Type and Number:
Japanese Patent JP2024015354
Kind Code:
A
Abstract:
【課題】微細で消費電力の小さい半導体装置を提供すること。【解決手段】第１の絶縁体上に第２の絶縁体を成膜し、第２の絶縁体上に第３の絶縁体を成膜し、第３の絶縁体に第２の絶縁体に達する開口部を形成し、第３の絶縁体上と、開口部と、に第１の導電体を成膜し、第１の導電体上に第２の導電体を成膜した後、研磨処理を行うことで、第３の絶縁体の上面よりも高い位置にある、第２の導電体と、第１の導電体と、を除去し、第１の導電体の端部は、開口部の端部において、開口部の端部の高さと同じか低く、第２の導電体の上面の高さは、第１の導電体の端部の高さと同じか低い配線層である。【選択図】図１

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Inventors:
Yutaka Okazaki
Tomoaki Moriwaka
Shinya Sasakawa
Takashi Ohtsuki
Application Number:
JP2023209062A
Publication Date:
February 01, 2024
Filing Date:
December 12, 2023
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L21/8234; H01L27/088; H01L27/146; H01L29/786



 
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