Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPH05145017
Kind Code:
A
Abstract:
PURPOSE: To improve wiring layout efficiency.
CONSTITUTION: A belt-shaped diffusion layer is formed on the surface part of a silicon semiconductor substrate. Wirings 10 and 40 wherein titanium silicide is formed by the reaction with the semiconductor silicon substrate.
Inventors:
WATANABE ATSUSHI
Application Number:
JP30090491A
Publication Date:
June 11, 1993
Filing Date:
November 16, 1991
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/3205; H01L21/822; H01L23/52; H01L27/04; (IPC1-7): H01L21/3205; H01L27/04
Attorney, Agent or Firm:
Matsumoto Shinkichi