Title:
SEMICONDUCTOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3429208
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method by which thinning of a silicide film can be prevented, a film be made uniform in thickness, and a silicide be made low in resistance.
SOLUTION: This semiconductor device is provided with a gate polysilicon film 109, an oxide film 106 on the side of gate polysilicon which is lower in height that the side surface of the gate polysilcon film 109, a side wall 108 which is higher in height than the oxide film 106 and gate polysilicon film 109 and is formed on the side of the oxide film 106, and a silicide film 111 which is formed on the upper surfaces of the gate polysilicon film 109 and oxide film 106 while using the side wall 108 as a wall.
Inventors:
Kazuya Hizawa
Application Number:
JP32766798A
Publication Date:
July 22, 2003
Filing Date:
November 18, 1998
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/423; H01L29/43; H01L29/49; (IPC1-7): H01L29/78; H01L21/28; H01L21/336; H01L29/43
Domestic Patent References:
| JP837301A | ||||
| JP10294292A | ||||
| JP5218410A |
Attorney, Agent or Firm:
Mamoru Shimizu (1 person outside)