Title:
SEMICONDUCTOR MANUFACTURE METHOD
Document Type and Number:
Japanese Patent JP3162181
Kind Code:
B2
Abstract:
PURPOSE: To supply an element having an excellent and stable electrical characteristic by performing a post-process in the case where dry-etching is performed by using mixed gas of methane trifluoride with sulfur hexafluo-ride.
CONSTITUTION: A metallic film 3 is deposited on a semi-insulating semiconductor substrate 1 and patterns are further made by an etching-proof mask to perform dry-etching by using mixed gas of methane trifluoride with sulfur hexafluoride, thereafter this embodiment is characterized by supplying an element having an excellent and stable electrical characteristic without giving bad influences to its performance by performing an oxygen plasma process, a hydrochloric acid solution process or its composite process.
Inventors:
Masanori Konan
Application Number:
JP13254192A
Publication Date:
April 25, 2001
Filing Date:
May 25, 1992
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/302; H01L21/304; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP3201529A | ||||
| JP6098626A | ||||
| JP2148728A |
Attorney, Agent or Firm:
Shintaro Nogawa