Title:
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2001351991
Kind Code:
A
Abstract:
To provide a semiconductor device having superior reliability in electric characteristics by preventing drop at the separating end of a Nch region or Pch region, and to provide a method for manufacturing the same.
The semiconductor device has an LLD structure, which is formed into a device forming region of a semiconductor substrate 1 separated by a separating oxide film 2 and includes a gate electrode 7 and a side wall insulating film 9, source and drain regions 11 and 13 of Nch and Pch formed on both sides of the LDD structure, and an insulating film 14 covering the separating oxide film 2 and the separating ends of the source and drain regions 11 and 13.
Inventors:
KASAOKA TATSUO
Application Number:
JP2000173472A
Publication Date:
December 21, 2001
Filing Date:
June 09, 2000
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/8238; H01L21/8242; H01L27/092; H01L27/108; (IPC1-7): H01L21/8242; H01L27/108; H01L21/8238; H01L27/092
Attorney, Agent or Firm:
Mamoru Takada (3 outside)
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