PURPOSE: To provide a semiconductor memory with improved read/write characteristics, in which parasitic resistance is reduced without in increase in cell area.

CONSTITUTION: A source region 4 and a drain region 6 are formed in a p-type silicon substrate 2. A floating gate 12 is formed above a channel region with a gate oxide film 10 interposed, and a control gate 16 is formed above the gate oxide film 12 with an insulating film 14 interposed. A high-melting metal line 18, such as of tungsten, is formed along word lines 16 in the source region 4. A tungsten silicide layer 19 is formed between the metal line and the source region 4. The metal line 18 is connected with a metallized interconnection 24 through a contact hole 22 in an insulating film 20 of PSG, and the metallized interconnection 24 is connected to ground.