Title:
SEMICONDUCTOR RECTIFIER
Document Type and Number:
Japanese Patent JPS56141777
Kind Code:
A
Abstract:
PURPOSE:To suppress the generation of jump up voltage and high harmonics in the semiconductor rectifier by a method wherein two groups of windings having mutually small leakage reactance are used, mutual leakage reactance between the two groups is made to large, and six-arm bridges are constituted using the pair of windings having large leakage reactance mutually. CONSTITUTION:The two groups of windings 421-424 having small leakage reactance mutually are prepared. Mutual leakage reactance between the two groups is made to large, and the six-arm bridges 55, 56 are constituted using the pair of windings having mutually large leakage reactance. In any case of commutation between the thyristors 551-554, commutation between the thyristors 553-556 and the commutation between the thyristors 551, 552, 555, 556 of the six-arm bridge 55, the jump up voltages from the windings having large leakage reactances and the surrounder of voltage on the winding side having small leakage reactance are accumulated in the four arms on the outside of the six-arm bridge 56 to make the voltage to be less than the normal value in total.
Inventors:
YONEHATA YUZURU
Application Number:
JP4604480A
Publication Date:
November 05, 1981
Filing Date:
April 07, 1980
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H02M7/19; H02M7/12; H02M7/155; (IPC1-7): H02M7/155