Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPH01150300
Kind Code:
A
Abstract:
PURPOSE:To obtain sufficient detecting sensitivity by individually changing the power supply voltage of a sense amplifier circuit through an exclusive power supply pad and controlling the arrival level of a bit line. CONSTITUTION:The sense amplifier SA is constituted of arranging a p-channel type sense amplifier part SAp and an n-channel type sense amplifier SAn on both the sides of a pair of bit lines BL, the inverse of BL. The amplifier part SAn is connected to the exclusive power supply pad VS1 and the amplifier part SAp is connected to the pad VS2. The pads VS1, VS2 are pads to be exclusively used for sense amplifiers independent of a power supply pad, and at the time of inspecting a probe in a chip or pellet state before assembling or bonding, power supply voltage to be supplied to the amplifiers SA can be controlled through the pads VS1, VS2 independently of other peripheral circuits. Thus, sufficient detecting sensitivity can be obtained.
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Inventors:
KOTANI HIROAKI
KUMADA ATSUSHI
KUMADA ATSUSHI
Application Number:
JP30887487A
Publication Date:
June 13, 1989
Filing Date:
December 07, 1987
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G11C11/401; G11C11/34; G11C11/409; G11C29/00; G11C29/50; (IPC1-7): G11C11/34; G11C29/00
Attorney, Agent or Firm:
Shizuyo Tamamura
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