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Patent Searching and Data


Title:
SEPARATION OF GALLIUM FROM ARSENIC
Document Type and Number:
Japanese Patent JPS61227888
Kind Code:
A
Abstract:

PURPOSE: To separate Ga from As by adsorbing Ga selectively to chelate resin by allowing aq. soln. contg. Ga and As to contact with chelate resin under specified conditions.

CONSTITUTION: Aq. soln. contg. Ga and As is allowed to contact with chelate resin at ≤5pH to adsorb Ga selectively to the chelate resin and to separate from As. Suitable chelate resin is one basing on either one among divinyl benzene-based copolymer, epoxy resin, phenol resin, or vinyl chloride resin and suitable functional group bonding the base resin is at least one selected from a group consisting of phosphate group, alkylene phosphate group, aminoalkylene phosphate group, iminoalkylene phosphate group, and amidoxime group. The chelate resin having adsorbed Ga can liberate easily Ga by eluting with acid or/and alkali and the chelate resin can be used repeatedly several times. The Ga in the eluting soln. is recovered by an electrolytic process.


Inventors:
MORIYA MASAFUMI
IMACHI TOMIO
Application Number:
JP6774485A
Publication Date:
October 09, 1986
Filing Date:
March 30, 1985
Export Citation:
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Assignee:
MIYOSHI YUSHI KK
International Classes:
C02F1/42; C01G15/00; C22B58/00; (IPC1-7): C02F1/42