Title:
SEPARATION OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS5961941
Kind Code:
A
Abstract:
PURPOSE:To easily and accurately remove defective elements by forming protrusion by adhering a thick member to the surface of defective element at the time of characteristic test, attaching the front surface of wafer after test to the adhesive sheet and dididing it into many segments and by removing the protruded elements after extending the sheet. CONSTITUTION:The characteristic test is carried out for each element 2 with a probe 6 by placing the rear surface of wafer 3 on the electrode plate 5 and a protrusion 9 is formed on the surface of defective element 2' in such a thickness like the wafer, namely about 0.2mm. by coating the surface with the specified amount of member such as resin boding which will becomes a thick part after it is hardened. Thereafter the wafer 3 having completed the test is attached with a adhesive sheet 10 at the front surface of wafer. The wafer 3 is divided into small segments and the adhesive sheet 10 is extended radially in order to separate respective elements 2. Thereby, the rear surface of good elements 2 are placed on the same flat level and only the defective elements 2' are protruded as much as the thickness of the protrusion 9 from the level of good elements. Accordingly, the defective elements 2' can be visually found through the oblique lighting from the upper side of adhesive sheet 10 and these can be removed easily.
Inventors:
SUYAMA NAOMI
Application Number:
JP17274682A
Publication Date:
April 09, 1984
Filing Date:
September 30, 1982
Export Citation:
Assignee:
NIPPON DENKI HOME ELECTRONICS
International Classes:
H01L21/301; H01L21/66; (IPC1-7): H01L21/78
Attorney, Agent or Firm:
Shogo Ehara