Title:
SILICA GLASS MATERIAL FOR MICROWAVE PLASMA DEVICE
Document Type and Number:
Japanese Patent JP3116723
Kind Code:
B2
Abstract:
PURPOSE: To obtain a silica glass material having specific properties, causing no impurity contamination of wafers, pinhole development or fracture even if used in microwave plasma device parts, thus enabling plasma treatment to be made safely, by synthesizing it through vapor phase chemical reaction.
CONSTITUTION: A silica glass material is synthesized by vapor phase chemical reaction followed by regulating the temperature and time of its firing process to bring the OH group concentration of the material to ≤130ppm followed by sintering it at 1500°C or so to make a silica glass material (rod), which is then subjected to thermal processing to a shape suitable to use. This silica glass material is, at the same time, characterized by being ≥100000 in the FQ value (frequency × Q value) in G Hz frequency band, being ≤-1ppm in the total content of impurities such as Na, K, Li, Fe and Al. Plasma device parts made of this silica glass material have microwave power absorption, therefore, are low in heat generation leading to reduction in their fracture due to thermal stress, also being prevented from erosion resulting from development of striae due to impurities and protected from troubles of pinhole development.
Inventors:
Shigetoshi Hayashi
Koichi Terao
Tadahisa Arahori
Koichi Terao
Tadahisa Arahori
Application Number:
JP11978394A
Publication Date:
December 11, 2000
Filing Date:
June 01, 1994
Export Citation:
Assignee:
SUMITOMO METAL INDUSTRIES,LTD.
International Classes:
C03B8/04; B01J19/08; C03B19/14; C03B20/00; C03C3/06; C23C16/40; C23C16/50; C23C16/511; H01L21/205; H01L21/302; (IPC1-7): C03B20/00; B01J19/08; C03B8/04; C03C3/06; C23C16/40; C23C16/50; H01L21/205; H01L21/3065
Domestic Patent References:
| JP334419A | ||||
| JP5254859A | ||||
| JP6140189A | ||||
| JP6120155A |