Title:
炭化珪素単結晶インゴットの製造装置及び炭化珪素単結晶インゴットの製造方法
Document Type and Number:
Japanese Patent JP6861557
Kind Code:
B2
Abstract:
To provide a manufacturing apparatus capable of manufacturing a high quality SiC single crystal ingot having less defect in a large-diameter single crystal growth by suppressing degradation of a heat insulator during a crystal growth, and a manufacturing method of SiC of single crystal ingot using the manufacturing method.SOLUTION: Provided are a manufacturing apparatus of a SiC single crystal ingot, the manufacturing apparatus being capable of exhausting sublimation gas leaking from a graphite crucible through a gap formed between a graphite shield member and an outer surface of a peripheral wall part by interposing the shield member interposed at least between the outer side surface of the peripheral wall part of the graphite crucible and an inner surface of the peripheral wall part covering the outer surface of the peripheral wall part, and a manufacturing method of the SiC single crystal ingot using the same manufacturing apparatus.SELECTED DRAWING: Figure 1
Inventors:
Tatsuo Fujimoto
Masakazu Katsuno
Shinya Sato
Masashi Ushio
Masashi Nakabayashi
Hiroshi Tsuge
Masakazu Katsuno
Shinya Sato
Masashi Ushio
Masashi Nakabayashi
Hiroshi Tsuge
Application Number:
JP2017069267A
Publication Date:
April 21, 2021
Filing Date:
March 30, 2017
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
C30B23/06; C30B29/36; F27B14/06; F27B14/12; F27B14/14
Domestic Patent References:
| JP2015166298A | ||||
| JP2013245136A | ||||
| JP2011219295A | ||||
| JP201737944A |
Foreign References:
| WO2016051485A1 |
Attorney, Agent or Firm:
Atsushi Aoki
Shinji Mitsuhashi
Masatoshi Takahashi
Naori Kota
Hajime Kawahara
Yasuo Dogaki
Shinji Mitsuhashi
Masatoshi Takahashi
Naori Kota
Hajime Kawahara
Yasuo Dogaki