To provide a silicon carbide substrate capable of preventing a void from forming in the silicon carbide substrate having a plurality of single crystal layers and a manufacturing method of the same.
A carbon layer 31 is formed on a first region of a principal plane of a material substrate 22. First and second single crystal layers 11 and 12 are arranged on the material substrate 22 so that each of a first rear face B1 of the first single crystal layer 11 and a second rear face B2 of the second single crystal layer 12 has a part facing a second region R2 of the principal plane of the material substrate 22, and a gap GP placed between a first side face S1 of the first single crystal layer 11 and a second side face S2 of the second single crystal layer 12 is disposed on the carbon layer 31. By heating the material substrate 22 and the first and second single crystal layers 11 and 12, a base substrate which is jointed to each of the first and second rear faces 11 and 12 is formed.
HARADA MAKOTO
INOE HIROKI
SASAKI MAKOTO
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki