Title:
SILICON NITRIDE POWDER
Document Type and Number:
Japanese Patent JP3250677
Kind Code:
B2
Abstract:
PURPOSE: To obtain an inexpensive silicon nitride powder excellent in a sintering property and capable of producing sintered products excellent in strengths by limiting the characteristics of the silicon nitride, such as its β-phase content, specific area and surface oxygen content.
CONSTITUTION: This silicon nitride powder has a β-phase content of ≥20°C, a specific surface area of ≥2m2/g, and a surface oxygen content of 0.2-3.0wt.%. The silicon nitride powder can be produced by various methods. For example, by a metal silicon direct nitriding method, silica-reducing method or silicon halide method, the silicon nitride having a α-phase content of ≥20% is produced, and subsequently ground to prepare the powder having a specific surface area of ≥2m2/g. The powder is thermally treated in air at 600-1200°C for 10min to 4hr to provide the objective silicon nitride powder.
Inventors:
Kei Isozaki
Hideki Hirotsuru
Hiroshi Nishikawa
Tetsuo Kaga
Hiroshi Shimodaira
Hideki Hirotsuru
Hiroshi Nishikawa
Tetsuo Kaga
Hiroshi Shimodaira
Application Number:
JP22095892A
Publication Date:
January 28, 2002
Filing Date:
July 29, 1992
Export Citation:
Assignee:
DENKI KAGAKU KOGYO KABUSHIKI KAISHA
International Classes:
C01B21/068; C04B35/58; C04B35/626; (IPC1-7): C01B21/068; C04B35/626
Domestic Patent References:
| JP2255510A | ||||
| JP2124709A | ||||
| JP3150212A | ||||
| JP2107509A |
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