Title:
SINGLE CRYSTAL SILICON CARBIDE AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3003027
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal SiC, by which the high quality single crystal hardly having the influence of lattice defect and micropipe defect is grown simply in the equipment respect and efficiently, and to promote the utilization of the single crystal SiC as a semiconductor material.
SOLUTION: A β-SiC layer 2 having ≥10 μm thickness is formed on the surface of an α-SiC single crystal substrate 1 by a PVD method or a thermal CVD method, and the obtained complex M is heat-treated in an atmosphere of saturated SiC vapor pressure at the temperature within a range of 1,650-2,400°C to convert a polycrystal of the β-SiC layer 2 to the α-SiC and to grow the single crystal oriented in the direction same as the crystal axis of the single crystal substrate 1 of the α-SiC single crystal on the SiC layer 2.
Inventors:
Kichiya Tanino
Application Number:
JP20703997A
Publication Date:
January 24, 2000
Filing Date:
June 25, 1997
Export Citation:
Assignee:
Nippon Pillar Industry Co., Ltd.
International Classes:
C30B1/02; C30B23/02; C30B25/02; C30B29/36; C30B33/00; H01L21/20; (IPC1-7): C30B29/36
Domestic Patent References:
| JP10324600A |
Attorney, Agent or Firm:
Koichi Suzue (1 person outside)