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Title:
SINTERED SILICON NITRIDE COMPACT AND CIRCUIT BOARD USING IT
Document Type and Number:
Japanese Patent JP2006096661
Kind Code:
A
Abstract:

To provide a sintered silicon nitride compact having high strength, high toughness, and high thermal conductivity.

At least one kind of element selected from the group consisting of Y and rare-earth elements (RE) and Mg are added as components of a sintering aid to the sintered silicon nitride compact. Microparticles with an average diameter of ≤100 nm, in which 0.6-10 wt.% of Y and the rare-earth elements in terms of the rare-earth oxides (RExOy) and Mg in terms of magnesium oxide (MgO) are contained as the total oxide content in terms of these oxides, the weight ratio represented by (RExOy)/(MgO) is >1, and the components of the sintering aid, oxygen, nitrogen, and silicon are contained, are deposited in silicon nitride particles composing the sintered silicon nitride compact.


Inventors:
IMAMURA TOSHIYUKI
KAWADA TSUNEHIRO
SOFUE MASAHISA
Application Number:
JP2005373302A
Publication Date:
April 13, 2006
Filing Date:
December 26, 2005
Export Citation:
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Assignee:
HITACHI METALS LTD
International Classes:
C04B35/584
Domestic Patent References:
JP2001080965A2001-03-27
JP2001064080A2001-03-13
JP2002097005A2002-04-02
JP2001316188A2001-11-13
JP2001293315A2001-10-23
JPH06279124A1994-10-04
Attorney, Agent or Firm:
Shiroyuki Hori
Yasuhiro Shioda