Title:
Ｓｎ－Ｂｉ－Ｉｎ系低融点接合部材、微小部材および半導体電子回路、バンプの製造方法ならびに半導体電子回路の実装方法
Document Type and Number:
Japanese Patent JP7080867
Kind Code:
B2
Abstract:
To provide a bonding member which has high bonding reliability, permits low-temperature bonding at 135°C or less in mounting a semiconductor component, a wiring substrate having low heat resistance and the like, and is suitable for Pb-free low-melting point electrically conductive bonding material.SOLUTION: A Sn-Bi-In type low-melting-point bonding member includes a Sn-Bi-In alloy which falls, in an Sn-Bi-In ternary phase diagram with a point (x, y, z) having x mass% of Sn, y mass% of Bi and z mass% of In, within a square having vertices of four points of point 1 (1, 69, 30), point 2 (26, 52, 22), point 3 (35, 25, 40), and point 4 (1, 59, 40), and has a melting point of 69 to 110°C.SELECTED DRAWING: Figure 1
Inventors:
Hirotoshi Nishi
Takeshi Sawai
Kenichiro Shirokawa
Soichiro Omae
Takeshi Sawai
Kenichiro Shirokawa
Soichiro Omae
Application Number:
JP2019165701A
Publication Date:
June 06, 2022
Filing Date:
September 11, 2019
Export Citation:
Assignee:
Shinryo Corporation
International Classes:
B23K35/26; B23K1/00; C22C12/00; C22C28/00; C22C30/04; H01L21/60; H05K3/34
Domestic Patent References:
| JP2018079480A | ||||
| JP2001219267A | ||||
| JP5534122B1 | ||||
| JP2000511466A | ||||
| JP7001178A |
Foreign References:
| WO2016056656A1 | ||||
| WO2008016140A1 |
Attorney, Agent or Firm:
Hisashi Kato
Kuboyama Takashi
Keita Tohsaka
Toru Nanse
Kuboyama Takashi
Keita Tohsaka
Toru Nanse
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