Title:
SOLID-STATE IMAGE PICKUP DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3934718
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the sensitivity characteristic on the long-wavelength side of a solid-state image pickup device by selectively diffusing signal charges generated by the long-wavelength part of incident light in the deep sections of n-type light receiving sections in the light receiving sections.
SOLUTION: In a semiconductor substrate 1, n-type light receiving sections 3 which generate and accumulate signal charges in accordance with the intensity of light made incident from the top side of an insulating film 2, p-type impurity layers 4 arranged on the sides of the sections 3, and n-type transfer sections 5 which transfer the signal charges accumulated in the impurity layers 4 are provided. In order to discharge the excessive charges accumulated in the light receiving sections 3, in addition, n-type buried drains sections 6 are formed below the transfer sections 5 with the impurity layers 4 in between and p-type impurity layers 7 are formed under the drain sections 6. Therefore, the signal charges generated in the deep sections of the light receiving sections 3 are selectively diffused in the receiving sections 3.
Inventors:
Niwayama Masahiko
Yuji Matsuda
Yuji Matsuda
Application Number:
JP33423496A
Publication Date:
June 20, 2007
Filing Date:
December 13, 1996
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L27/148; H04N5/335; H04N5/369; H04N5/372; (IPC1-7): H01L27/148; H04N5/335
Domestic Patent References:
| JP8107195A |
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka
Mitsuo Wada
Ryuji Higashijima
Mitsuo Tanaka
Mitsuo Wada
Ryuji Higashijima
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