To provide a solution material for an underlayer film having etching resistance and an antistatic effect and capable of forming a film by a coating method, and a pattern forming method using the solution material.

The solution material contains at least one selected from the group comprising organic compounds each having ≥85 wt.% carbon content per one molecule and metallic compounds and a surfactant. The pattern forming method has a step for forming an underlayer film on a film to be worked by coating the top of the film to be worked with the solution material, a step for forming a resist film on the underlayer film and a step for forming a resist pattern by patternwise exposing the resist film.