Title:
SOLUTION RAW MATERIAL FOR FORMING COPPER THIN FILM FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION AND COPPER THIN FILM MADE THEREFROM
Document Type and Number:
Japanese Patent JP3480488
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a high film forming rate, to efficiently dissolve a raw material on a substrate, to increase its volatility and to make excellent its adhesion for a base film.
SOLUTION: This raw material is composed by adding an organometallic copper compd. contg. monovalent copper metal such as copper+1 (allyltrimethylsilane)(hexafluoroacetylacetone) with a 1st compd. of one or ≥two kinds selected from the group of the hydrate of β-diketone, trifluoroacetone, the hydrate of trifluoroacetone, hexafluoroacetone, the hydrate of hexafluoroacetone, a hydroxy compd. of a β-diketone, the hydrate of the hydroxy compd. of β-diketone and the hydrate of pentyne. Moreover, it is composed by adding an organometallic copper compd. contg. monovalent copper metal with a 2nd compd. such as an alkylsilane, the hydrate of the alkylsilane, an alkoxysilane and the hydrate of the alkoxysilane and/or a 3rd compd. such as each derivative or an acetylene and an alkene.
Inventors:
Atsushi Sai
Hideyuki Hirasha
Katsumi Ogi
Hideyuki Hirasha
Katsumi Ogi
Application Number:
JP1474099A
Publication Date:
December 22, 2003
Filing Date:
January 22, 1999
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C23C16/18; H01L21/285; (IPC1-7): C23C16/18; H01L21/285
Domestic Patent References:
| JP10140352A | ||||
| JP10195654A | ||||
| JP2000143669A |
Attorney, Agent or Firm:
Masayoshi Suda