Title:
特定種イオン源およびプラズマ成膜装置
Document Type and Number:
Japanese Patent JP7125789
Kind Code:
B2
Abstract:
A specific type ion source 10 includes a chamber 11; a source gas supply 12 configured to supply an O2 gas into the chamber 11; a plasma forming device 13 configured to form plasma within the chamber 11 by applying a high frequency power to the O2 gas supplied into the chamber 11; an accelerator 14 configured to extract ions of an O element included in the plasma formed within the chamber 11 to an outside of the chamber 11, and configured to accelerate the extracted ions in a direction indicated by an arrow AR14; and a sorting device 15 configured to sort out a specific type ion O− from the ions accelerated by the accelerator 14 and configured to output the sorted specific type ion in a direction indicated by an arrow AR12.
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Inventors:
Haruhiko Himura
Application Number:
JP2020525221A
Publication Date:
August 25, 2022
Filing Date:
November 07, 2018
Export Citation:
Assignee:
Kyoto University of Technology
International Classes:
H01J27/18; C23C16/50; H05H1/46
Domestic Patent References:
| JP2000021597A | ||||
| JP62235485A |
Other References:
山本 昌良 他,室温下で高純度 ZnO 粒子生成に用いる酸素負イオン源の開 発 (Development of negative oxygen plasma source applied to produce pure ZnO at room temperature),第 74 回応用物理学会秋季学術講演会 講演予稿集,2013年09月,#08-063
Attorney, Agent or Firm:
Kimura Mitsuru
Yasushi Morikawa
Shiro Tatsutake
Yasushi Morikawa
Shiro Tatsutake