SPUTTERING TARGET AND METAL OXIDE THIN FILM OBTAINED THEREBY

Title:

SPUTTERING TARGET AND METAL OXIDE THIN FILM OBTAINED THEREBY

Document Type and Number:

Japanese Patent JP2014015680

Kind Code:

A

Abstract:

To disclose a sputtering target that enables formation of a metal oxide thin film that has high crystallization temperature, and has low electric resistance and excellent etching characteristics even under an amorphous state.

Disclosed is a sputtering target containing a metal oxide composition comprising indium oxide, zinc oxide and tin oxide, such that, based on the total atom content of indium, zinc and tin, the indium atom content ranges from 60 to 80 at%, the zinc atom content ranges from 10 to 25 at%, and the tin atom content ranges from 1 to 20 at%, wherein the zinc atom content is greater than tin atom content.

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Inventors:

LU MING CHANG
GUO ZHI-YIN
YIN SHIN CHUN
CHANG CHIH YUNG

Application Number:

JP2013140496A

Publication Date:

January 30, 2014

Filing Date:

July 04, 2013

Export Citation:

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Assignee:

SOLAR APPLIED MAT TECH CORP

International Classes:

C23C14/34

Domestic Patent References:

JP2007084842A	2007-04-05
JP2007063649A	2007-03-15

Attorney, Agent or Firm:

Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro

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