Title:
基板製造方法
Document Type and Number:
Japanese Patent JP7121941
Kind Code:
B2
Abstract:
A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser (14) for condensing a laser beam (B) on an irradiated surface (20r) of a magnesium oxide single crystal member (20) in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam (B) to the surface (20r) of the single crystal substrate (20) under designated irradiation conditions to condense the laser beam (B) into an inner portion of the single crystal substrate (20) while moving the condenser (14) and the single crystal substrate (20) relative to each other in a two-dimensional manner. A third step is performed which forms new processing mark lines between the adjacent irradiation lines in the second step to allow planar separation, by irradiating the laser beam (B) to the surface (20r) of the single crystal substrate (20) under designated irradiation conditions to condense the laser beam (B) into an inner portion of the single crystal substrate (20) while moving the condenser (14) and the single crystal substrate (20) relative to each other in a two-dimensional manner.
Inventors:
Junichi Ikeno
Youhei Yamada
Suzuki Hideki
Noguchi Hitoshi
Youhei Yamada
Suzuki Hideki
Noguchi Hitoshi
Application Number:
JP2018043006A
Publication Date:
August 19, 2022
Filing Date:
March 09, 2018
Export Citation:
Assignee:
Saitama University
Shin-Etsu Polymer Co., Ltd.
Shin-Etsu Chemical Co., Ltd.
Shin-Etsu Polymer Co., Ltd.
Shin-Etsu Chemical Co., Ltd.
International Classes:
H01L21/304; B23K26/53
Domestic Patent References:
| JP2008044807A | ||||
| JP2017216424A | ||||
| JP2012004315A | ||||
| JP2017028072A |
Foreign References:
| WO2017199784A1 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu