Title:
電磁エネルギーの吸収を最適化することにより半導体ウェハを加熱するシステムと方法
Document Type and Number:
Japanese Patent JP4450624
Kind Code:
B2
Abstract:
An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.
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Inventors:
Timmans Paul Janice
Application Number:
JP2003542848A
Publication Date:
April 14, 2010
Filing Date:
November 05, 2002
Export Citation:
Assignee:
Mattson Technology Incorporated
International Classes:
F27B17/00; C23C16/48; H01L21/26; C30B25/10; C30B31/12; F27D99/00; H01L21/00; H01L21/268
Domestic Patent References:
| JP1135529A | ||||
| JP1173707A | ||||
| JP629212A | ||||
| JP58112327A |
Attorney, Agent or Firm:
Sadao Kumakura
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima