Title:
TEMPERATURE SENSOR AND CMOSN-TYPE SUBSTRATE DIODE THEREFOR
Document Type and Number:
Japanese Patent JP2004055785
Kind Code:
A
Abstract:
To provide a CMOSN-type substrate diode for temperature sensor which is not affected by a parasitic transistor with low consumption current, and a temperature sensor.
The CMOSN-type substrate diode for temperature sensor (50) is provided with an n-type substrate (51), a p-type well layer (52) formed in the n-type substrate, an n-type high concentration layer (53) formed in the p-type layer and a p+-diffusion layer (57) formed near a surface of the n-type high concentration layer. The diode (50) is formed by pn-junction of the p+-diffusion layer and the n-type high concentration layer.
Inventors:
KAMIYA KAZUHIRO
WATANABE ATSUSHI
ONODERA SHIGEKI
WATANABE ATSUSHI
ONODERA SHIGEKI
Application Number:
JP2002210545A
Publication Date:
February 19, 2004
Filing Date:
July 19, 2002
Export Citation:
Assignee:
MITSUMI ELECTRIC CO LTD
International Classes:
H01L27/092; H01L21/8238; H01L29/861; H01L35/00; (IPC1-7): H01L29/861; H01L21/8238; H01L27/092; H01L35/00
Attorney, Agent or Firm:
Yosuke Goto
Kenho Ikeda
Kenho Ikeda