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Title:
THERMOELECTRIC MATERIAL, THERMOELECTRIC DEVICE, OPTICAL SENSOR, AND METHOD FOR MANUFACTURING THERMOELECTRIC MATERIAL
Document Type and Number:
Japanese Patent JP2017216388
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To realize a superior thermoelectric property in a thermoelectric material including nano particles.SOLUTION: A thermoelectric material comprises: a mixture of a first material having a band gap and a second material different from the first material; and a plurality of nano particles dispersed in the mixture. The first material includes Si and Ge. Supposing that the atomic concentration (unit: atom%) of the second material is "c", and the composition ratio of Si to Ge is "r" in the thermoelectric material, the atomic concentration of the second material and the composition ratio satisfy relational expressions represented by the following expressions (1) and (2): r≤0.62c-0.25 (1); and r≥0.05c-0.06 (2).SELECTED DRAWING: Figure 1

Inventors:
ADACHI MASAHIRO
Application Number:
JP2016109968A
Publication Date:
December 07, 2017
Filing Date:
June 01, 2016
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L35/26; B82Y30/00; B82Y40/00; C01B33/06; G01J1/02; H01L21/205; H01L35/14; H01L35/32; H01L35/34
Domestic Patent References:
JP2015135939A2015-07-27
JPH10242535A1998-09-11
JPH1032354A1998-02-03
Foreign References:
WO2015093207A12015-06-25
WO2014196233A12014-12-11
WO2014196475A12014-12-11
Other References:
TAKIGUCHI, HIROAKI ET AL.: "Nano Structral and Thermoelectric Properties of SiGeAu Thin Films", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, JPN6017014778, 2011, JP, pages 041301 - 1, ISSN: 0004415043
Attorney, Agent or Firm:
Fukami patent office