Title:
THIN FILM SWITCHING ELEMENT
Document Type and Number:
Japanese Patent JP3412171
Kind Code:
B2
Abstract:
PURPOSE: To provide a thin film switching element having a threshold voltage higher than that of a conventional NIN element while the element shows V-I characteristics symmetrical to a bipolar voltage.
CONSTITUTION: First semiconductor layers 5 and 6 consisting of an N-type silicon layer are respectively formed on an insulative substrate 1 in opposition to first and second electrode layers 2 and 3 holding a gap part 4 between them and are individually laminated on the layers 2 and 3. Moreover, a second semiconductor layer 7 consisting of a non-doped I-type silicon layer, a third semiconductor layer 8 consisting of an N-type silicon layer and an upper electrode layer 9 are laminated in order in a form that the layer 5 on the layer 2, the gap part 4 and the layer 6 on the layer 3 are covered with them to constitute a switching element and a threshold voltage of the switching element is improved.
Inventors:
Koichi Kodera
Yuji Mukai
Yuji Mukai
Application Number:
JP27988392A
Publication Date:
June 03, 2003
Filing Date:
October 19, 1992
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L49/02; G02F1/1365; (IPC1-7): H01L49/02; G02F1/1365
Domestic Patent References:
| JP2154230A | ||||
| JP62272228A | ||||
| JP1243031A | ||||
| JP4233777A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)