To provide a CMOS thin film transistor which can shorten the processes and can reduce a processing cost, and also to provide a manufacturing method of an OELD device using the same.
The manufacturing method of the CMOS thin film transistor includes steps of: preparing a substrate having a first and a second TFT region; forming a gate electrode on the substrate; forming a gate insulation film on the entire surface of the substrate including the gate electrode; forming a semiconductor layer using a mask on a predetermined region of the gate insulation film; conducting a backside exposure of the mask using the gate electrode; implanting n-type impurity ions into a semiconductor layer in the first and second TFT regions using the backside-exposed mask to form a channel region and a source/drain region; ashing both side faces of the backside-exposed mask; implanting low-concentration impurity ions into the semiconductor layer in the first and second TFT regions using the ashed mask to form an LDD region; and implanting p-type impurity ions into the semiconductor layer in the second TFT region to form a source/drain region.
LEE SANG-GUL
Masatake Shiga
Yasuhiko Murayama
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