Title:
THREE-DIMENSIONAL VERTICAL NOR FLASH THIN FILM TRANSISTOR STRING
Document Type and Number:
Japanese Patent JP2022172352
Kind Code:
A
Abstract:
To provide a high density memory structure called a 3D vertical NOR flash memory string.SOLUTION: A memory structure includes active columns of polysilicon formed above a semiconductor substrate 310 . Each of the active columns includes one or more vertical NOR strings 305, and each of the NOR strings includes thin film storage transistors 316, 317 that share a local source line 375 and a local bit line 374. The local bit lines are connected to sense amplifiers provided on the semiconductor substrate by one segment MSBL1 and MSBL2 of the segmented global bit line.SELECTED DRAWING: Figure 3D
Inventors:
Harari, Eri
Yang, Tian Hong
Yang, Tian Hong
Application Number:
JP2022143443A
Publication Date:
November 15, 2022
Filing Date:
September 09, 2022
Export Citation:
Assignee:
SunRise Memory Corporation
International Classes:
H01L27/11578; H01L21/336; H01L27/11551
Attorney, Agent or Firm:
Patent Business Corporation Oshima Patent Office