PLASMA TREATMENT APPARATUS - MITSUBISHI ELECTRIC CORP

Title:

PLASMA TREATMENT APPARATUS

Document Type and Number:

Japanese Patent JPH0684837

Kind Code:

A

Abstract:

PURPOSE: To obtain a plasma treatment apparatus which has been improved so as to plasma-treat a substrate to be treated without damaging a device.

CONSTITUTION: A plasma generation chamber 1 used to generate a plasma is installed on a reaction chamber 2 which houses a substrate 5 to be treated and which executes a plasma treatment. A first grid plate 301 and a second grid plate 302 are installed at their boundary so as to partition the reaction chamber 2 and the plasma generation chamber 1. The first grid plate 301 and the second grid plate 302 are arranged in parallel by keeping a prescribed interval. A plurality of holes are made respectively in the first grid plate 301 and the second grid plate 302. The holes made in the first grid plate 301 and the holes made in the second grid plate 302 are arranged in such a way that they are not overlapped with each other in the up-and-down direction.

Inventors:

TOYODA MASATO
HANAZAKI MINORU
EJIMA TAIZO

Application Number:

JP23725192A

Publication Date:

March 25, 1994

Filing Date:

September 04, 1992

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

C23F4/00; H01L21/302; H01L21/31; H05H1/00; H05H1/46; (IPC1-7): H01L21/302; C23F4/00; H05H1/00

Domestic Patent References:

JPH04225226A

1992-08-14

Attorney, Agent or Firm:

Fukami Hisaro (3 outside)

Next Patent: SEMICONDUCTOR-SUBSTRATE DRY ETCHING APPARATUS