PURPOSE: To make it possible to achieve the short wavelength light emission and the high output power for a semiconductor laser, especially, for DSC laser by providing a high-refractive-index guide layer on a clad layer on the side of a heat radiator.

CONSTITUTION: On an n-type GaAs substrate 11, a clad layer of n-type AlGaInP on the side of the substrate, an-undoped GaInP active layer 13, a p-type clad layer 14 on the side of a heat radiator and a p-type GaAs cap layer 15 are epitaxially grown sequentially. The clad layer 14 is sequentially constituted of a p-type first AlGaInP clad layer 14A and a second clad layer 14B having the higher heat conductivity than 14A from the side of the active layer 13. The second clad layer 14B is constituted of a high-refractive-index guide layer 14B0 and a low-refractive-index layer 14B1 comprising AlGaAs. Thus, the distribution of the light can be shifted to the side of the clad layer as a whole.