Title:
【発明の名称】平面センサ-
Document Type and Number:
Japanese Patent JP2566910
Kind Code:
B2
Abstract:
PURPOSE:To obtain a large-area planar sensor of excellent stability and enable fast-response and high-precision positional detection using this sensor by uniform ly depositing a semiconductor on the lower electrode using a semiconductor whose physical properties are varied by light or heat, thereby providing a struc ture wherein only a very small current flows even when a bias voltage is applied. CONSTITUTION:On an insulating substrate or a conductive substrate 1 coated with an insulating material, a metal or a conductive compound is deposited as a lower electrode 2, and the sheet resistance thereof is made 10OMEGA/square or more and 1MOMEGA/square or less, preferably 100OMEGA/square or more and 50kOMEGA/ square or less. On this substrate, a semiconductor which can be deposited over a large area, e.g., a-Se, CdSe, CdS, ZnO, ZnSe, a-As2S3, a-selenium-arsenic alloy, a-slenium-tellurium alloy, organic semiconductor or a-silicon alloy, is uniformly deposited in the shape of a thin film. Using a combination of materials which can perform a P-N junction, the deposition is performed so as to provide a structure which has at least one unit indicated by P-I-N-I-P or N-I-P-I-N.
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Inventors:
YAMAGUCHI YOSHINORI
TAKADA JUN
OOWADA YOSHIHISA
TAKADA JUN
OOWADA YOSHIHISA
Application Number:
JP18147485A
Publication Date:
December 25, 1996
Filing Date:
August 19, 1985
Export Citation:
Assignee:
KANEGAFUCHI CHEMICAL IND
International Classes:
H01L31/10; G06F3/042; G06K9/20; G06K11/06; H01L35/00; (IPC1-7): H01L31/10; G06K9/20; G06K11/08; H01L35/00
Domestic Patent References:
| JP58141561A |
Attorney, Agent or Firm:
Asahina Sota