【発明の名称】半導体装置 - 株式会社デンソー

Title:

【発明の名称】半導体装置

Document Type and Number:

Japanese Patent JP3321899

Kind Code:

B2

Abstract:

A semiconductor device of an SOIMOSFET comprising a semiconductor substrate, an insulating layer and a thin film single-crystalline semiconductor layer, the insulating layer containing a floating electrically conductive layer buried therein at a portion corresponding to the channel, the floating electrically conductive layer being electrically insulated from the other portions, the semiconductor device further comprising an electrode adjacent to the floating electrically conductive layer for applying a voltage by which an electric charge is injected into and stored in the floating electroconductive layer.

More Like This:

JP2005165569	BIAS VOLTAGE GENERATING CIRCUIT
JPH05136348	OVERVOLTAGE PROTECTIVE DIODE FOR SEMICONDUCTOR DEVICE USE
JP6732713	Semiconductor devices and display devices

Inventors:

Kazuhiro Tsuruta
Akiyoshi Asai
Seiji Fujino
Hiroaki Himi

Application Number:

JP13186493A

Publication Date:

September 09, 2002

Filing Date:

June 02, 1993

Export Citation:

Click for automatic bibliography generation Help

Assignee:

株式会社デンソー

International Classes:

H01L27/04; H01L21/336; H01L21/822; H01L21/84; H01L27/08; H01L29/78; H01L29/786; H01L29/788; (IPC1-7): H01L29/786

Domestic Patent References:

JP6163895A

Attorney, Agent or Firm:

Hirohiko Usui

Previous Patent: 熱可塑性樹脂成形品

Next Patent: 高誘電率磁器組成物