Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS598344
Kind Code:
A
Abstract:
PURPOSE:To remove a semiconductor product with a nonstandardized semiconductor substrate positively by making sure a resistivity value of a semiconductor substrate by a breakdown voltage value of a P-N junction. CONSTITUTION:An N<+> type buried layer 4 is formed to the P type semiconductor substrate 5, and N-type epitaxial growth layers 8 are formed onto the layer 4. P type layers 3 for isolating an element are formed to the eptaxial layers 8 so as to be surrounded at distances not joined with the N<+> type buried layer 4 while a P type semiconductor layers 3' is formed in an internal region of the layer 8 so as to join with the upper layer of the N<+> type buried layer 4. An electrode extracting port is formed to the upper surface of the P type semiconductor layer 3', and the layer 3' is wired by a metallic electrode 1. An external metallic wiring terminal A for testing characteristic is formed to the wiring 1. The breakdown voltage of the PN junction between the N<+> type buried layer 4 and the P type semiconductor substrate 5 is measured by applying positive voltage to the electrode section A. The resistivity value (impurity concentration) of the substrate 5 is inspected from the breakdown voltage value.
More Like This:
| JP2980630 | [Title of Invention] Compound semiconductor device |
| JPS61220464 | SEMICONDUCTOR DEVICE |
| JPS63281464 | RESONANCE-TUNNELLING TRANSISTOR |
Inventors:
KAMATA SAZUKU
Application Number:
JP11752382A
Publication Date:
January 17, 1984
Filing Date:
July 06, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/331; H01L21/66; H01L29/73; (IPC1-7): H01L29/68
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: PRODUCTION OF HIGH DAMPING STEEL TUBE