PURPOSE: To simplify processes and to miniaturize the device, when a bipolar transistor and a Schottky diode are formed on the same semiconductor substrate, by forming an emitter region by alignment of the base electrode of the transistor and the Schottky electrode of the diode.

CONSTITUTION: An N+ type embedded layer 3 is diffused and formed in a P-type Si substrate 2. An N-type layer 5 is epitaxially grown on the entire surface including the layer 3. The layer 5 is divided into element regions 24A and 24B by an element isolating region 4, with the layer 3 being included. Then a deep P+ type graft base 6 and a shallow P+ type region, which is linked to the region 6, are diffused and formed in the region 24A. An N+ type emitter region 7 is provided in the region 8. An emitter electrode 12e is attached to the region 7 through a polycrystalline Si layer 11e. A Schottky electrode 9 is attached to the surface of the region 24A, where the base region is not present. A base taking out electrode 10 is connected to the region 6. The electrodes 9 and 10 are made symmetrical. The element region for the diode, which has been necessary in a conventional device, can be omitted.