Title:
MAGNETO-RESISTANCE EFFECT ELEMENT
Document Type and Number:
Japanese Patent JPS5910290
Kind Code:
A
Abstract:
PURPOSE:To enable the biasing by a method wherein the structure of magnetic domain is controlled by means of magnetic anisotropy induced in magneto- static manner by the unevenness of the surface of a substrate whereon a magneto-resistance effect element film (MR film) is to be formed. CONSTITUTION:The substrate 5 is coated with photo resist to the film thickness of 0.5 times or more of the pattern wire width Wo, which is patterned and sputter-etched, then boundaries 7 between the photo resist 6 and the substrate 5 are etched faster than the other substrate surfaces 8, accordingly V-shaped stepwise differences are generated in the neighborhood of the boundaries 7, and therefore an unevenness density becomes twice one (2/P) of the unevenness density (1/P) due to pattern pitches P. When a MR film 10 is adhered on the substrate 5 whereon an unevenness 9 is provided in the direction of 45 deg. to the direction of a MR reproducing current (i), magnetization becomes equal to the state of bias in the direction of 45 deg.. The orientation of magnetization can be determined by the direction of the unevenness of a surface, and thus the size of anisotropic magnetism can be controlled by the form of unevenness of a surface.
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Inventors:
YANAGI TERUMI
KAMINAKA NOBUMASA
NOMURA NOBORU
YOUDA HIROSHI
KAMINAKA NOBUMASA
NOMURA NOBORU
YOUDA HIROSHI
Application Number:
JP12002682A
Publication Date:
January 19, 1984
Filing Date:
July 09, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G11B5/39; H01L43/08; (IPC1-7): G11B5/30; H01L43/08
Attorney, Agent or Firm:
Toshio Nakao