Title:
PREPARATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6055617
Kind Code:
A
Abstract:
PURPOSE:To enable formation of a stable metallic pattern with high reliability by a method in which a silicon oxide film is exposed in its upper peripheral face of the edges, a metallic layer is formed by means of vapor deposition and the sections of the metallic layer formed on the resist film and the resist film are removed. CONSTITUTION:A pattern of resist 1 is formed on an SiO2 film 2, and by etching the SiO2 film 2, a through hole corresponding to the pattern of the resist 1 is formed. After the formation of the hole by etching the SiO2 film 2, the resist 1 is ashed with O2 plasma. The edges of the resist are etched slightly at this moment, whereby the upper peripheral surfaces of the edges of the SiO2 film 2 are exposed. An aluminium film 3 is formed by means of vapor deposition and its unrequired portions as formed on the resist 1 are removed together with the resis 1 so as to form an aluminium pattern. The aluminium pattern thus formed has portions overhung on the upper faces of the edges of the SiO2 film 2, and thus a stable shape can be maintained.
Inventors:
TAKIMOTO SADAJI
YAMAMOTO AKINAGA
ANZAI HITOSHI
YAMAMOTO AKINAGA
ANZAI HITOSHI
Application Number:
JP16394183A
Publication Date:
March 30, 1985
Filing Date:
September 06, 1983
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK
International Classes:
H01L21/28; (IPC1-7): H01L21/28
Domestic Patent References:
| JPS5378791A | 1978-07-12 | |||
| JPS5874042A | 1983-05-04 |
Attorney, Agent or Firm:
Toshi Inoguchi