Title:
METHOD AND DEVICE FOR GROWING GAAS SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH0640794
Kind Code:
A
Abstract:
PURPOSE: To obtain uniform characteristics all over the drawn GaAs single crystal.
CONSTITUTION: A GaAs molten liquid with <1 molar ratio of Ga/As is housed in the main chamber 9a of a crucible 9, while a GaAs molten liquid having >1 molar ratio of Ga/As or a Ga molten liquid is housed in a sub chamber 9b connected to the main chamber 9a through a communicating tube 11. The GaAs single crystal 5 is drawn from the main chamber 9a with a drawing shaft 2. during drawing, the molten liquid in the sub chamber 9b is introduced to the main chamber 9a so that the Ga/As molar ratio of the GaAs molten liquid in the main chamber 9a is always maintained constant.
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Inventors:
YAMASHITA YOJI
Application Number:
JP19410692A
Publication Date:
February 15, 1994
Filing Date:
July 21, 1992
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C30B15/02; C30B15/10; C30B29/40; H01L21/208; (IPC1-7): C30B15/02; C30B15/10; C30B29/40; H01L21/208
Attorney, Agent or Firm:
Kazuo Sato (3 others)
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