Title:
SEMICONDUCTOR LIGHT-RECEPTOR
Document Type and Number:
Japanese Patent JPS59145579
Kind Code:
A
Abstract:
PURPOSE:To prevent the effect of a high impurity-concentration diffusion region on photosensitivity determined by the whole P-N junction by forming a second impurity diffusion region of a conduction type reverse to a silicon substrate to a first impurity diffusion region forming section. CONSTITUTION:Arsenic ions are implanted to an N type silicon substrate 11, and an SiO2 film 5 is formed on the N type silicon substrate through annealing treatment in a nitrogen atmosphere and thermal oxidation treatment. Boron is diffused selectively while using the SiO2 film as a mask to form a P type diffusion region 21. The P type diffusion region 21 penetrates an N type diffusion region 6, and the diffusion front surface of the region 21 reaches to the N type silicon substrate 11. The greater part of the region 21 are in contact with the N type silicon substrate 11, and photosensitivity characteristics are determined by a P-N junction formed between the substrate and the region 21. With a dark current value, on the other hand, the increase of recombination currents is inhibited because impurity concentration in a surface layer is augmented.
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Inventors:
KOBAYASHI ISAMU
UTSUNOMIYA SATORU
OGATA SHIYUNJI
UTSUNOMIYA SATORU
OGATA SHIYUNJI
Application Number:
JP2003783A
Publication Date:
August 21, 1984
Filing Date:
February 09, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L31/10; H01L31/103; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Toshio Nakao