Title:
PATTERN FORMATION
Document Type and Number:
Japanese Patent JPS5834920
Kind Code:
A
Abstract:
PURPOSE:To contrive the simplification of a mask manufacturing process by a method wherein a far ultra-violet rays and permeable substrate formed the pattern of a photo-sensitive resin film is used as a mask and pattern transfer is done by far ultra-violet rays exposure. CONSTITUTION:A photo-sensitive resin film is applied on a quartz substrate 1 and a predetermined diagram 2 consisting of the resin film by exposure and development is formed. With the quartz substrate used as a mask, a pattern by far ultra-violet rays l transferred, the far ultra-violet rays are not irradiated at the 4' part of the resist 4 on a semiconductor substrate 3. Then a pattern 4' is formed by applying development treatment to the resist 4.
More Like This:
| JPS5740926 | DEVICE FOR PROJECTION AND EXPOSURE |
| JPS63308917 | FINE PATTERN EXPOSURE METHOD |
Inventors:
TODOKORO YOSHIHIRO
Application Number:
JP13475081A
Publication Date:
March 01, 1983
Filing Date:
August 26, 1981
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/30; H01L21/027; (IPC1-7): H01L21/30
Domestic Patent References:
| JPS57212446A | 1982-12-27 |
Attorney, Agent or Firm:
Toshio Nakao