Title:
ETCHING METHOD FOR SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS59191334
Kind Code:
A
Abstract:
PURPOSE:To form a deep etching hole by a method wherein a photomechanical process is performed after a positive type resist has been applied on a semiconductor substrate, and a process wherein an etchant is used is repeated in a plurality of times. CONSTITUTION:A positive type resist 2 is applied and coated on the surface of a semiconductor substrate 1, and a resist pattern is formed by performing a photomechanical process. Said semiconductor substrate 1 is dipped in an anisotropic etchant for the prescribed period, and an etching hole 1a of the depth D1 and the width on the hole bottom side of W is formed. The positive type resist 2 is applied again on the semiconductor substrate 1, and a resist pattern is formed by performing a photomechanical process. Said semiconductor substrate 1 is dipped in an anisotropic etchant again for the prescribed period, and an etching hole 1e of the depth D4 and the hole bottom side width of W is formed. By repeatedly performing the same process, a deep etching hole having the constant width W can be formed easily.
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Inventors:
AONO KOUJI
Application Number:
JP6652483A
Publication Date:
October 30, 1984
Filing Date:
April 13, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Masuo Oiwa