Title:
TRANSISTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH06295922
Kind Code:
A
Abstract:
PURPOSE: To provide a perfect transistor structure by overcoming the prior art drawbacks. CONSTITUTION: The method of manufacturing such a type of transistors esp. hetero-junction bipolar transistors includes steps of manufacturing the collector, base and emitter and layers for forming ohmic contacts of the collector, base and emitter. The emitter manufacturing step has a step of placing a double layer for forming the emitter on a base layer, its first layer 110 is made of a first material having a large energy gap, and second layer 120 is made of a second material having a high energy gap. The base ohmic contact is disposed on the first layer of the emitter.
Inventors:
SHIYANTARU DEYUBONNSHIYUBARIE
JIYAN DANGURA
JIYANNRUI BENSHIMORU
FURANSOWA AREKUSANDORU
JIYAN DANGURA
JIYANNRUI BENSHIMORU
FURANSOWA AREKUSANDORU
Application Number:
JP14518193A
Publication Date:
October 21, 1994
Filing Date:
June 16, 1993
Export Citation:
Assignee:
CENTRE NAT ETD TELECOMM
International Classes:
H01L29/205; H01L21/331; H01L29/73; H01L29/737; (IPC1-7): H01L21/331; H01L29/205; H01L29/73
Domestic Patent References:
| JPH03110829A | 1991-05-10 | |||
| JPS631066A | 1988-01-06 |
Attorney, Agent or Firm:
Kazuo Sato (3 others)
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