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Title:
USING METHOD FOR PHOTOELECTRON EMISSION PLANE AND USING METHOD FOR ELECTRON TUBE
Document Type and Number:
Japanese Patent JP3122327
Kind Code:
B2
Abstract:

PURPOSE: To provide a photoelectron emission plane with a small range of travel time to the emission plane and good time response.
CONSTITUTION: A p-type light absorbing layer 12 and a p-type electron emission layer 13 are layered on a p-type transparent substrate 11 to form a hetero lamination layer structure for III-V group compound semiconductors. A Schottky electrode 15 and an ohmic electrode 16 are formed on the surface of the electron emission layer 13 and on the back of the transparent substrate 11, respectively. Sufficiently required voltage to form an electric field throughout the light absorbing layer 12 is applied between the Schottky electrode 15 and the ohmic electrode 16. A potential gradient is therefore formed throughout the light absorbing layer 12 to accelerate all photoelectrons excited by the light absorbing layer 12 when light is injected. In this way, all photoelectrons emitted from an emission plane 14 are accelerated electrons.


Inventors:
Minoru Arakaki
Toru Hirohata
Masami Yamada
Katsuyuki Kinoshita
Application Number:
JP3885295A
Publication Date:
January 09, 2001
Filing Date:
February 27, 1995
Export Citation:
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Assignee:
Hamamatsu Photonics K.K.
International Classes:
H01J1/34; H01J29/38; H01J31/50; H01J40/06; (IPC1-7): H01J1/34; H01J29/38; H01J31/50; H01J40/06
Domestic Patent References:
JP5234501A
JP750149A
JP5504652A
JP501375B2
Other References:
【文献】特許2923462(JP,B2)
【文献】米国特許3958143(US,A)
Attorney, Agent or Firm:
Yoshiki Hasegawa (4 outside)