PURPOSE: To eliminate the disturbance of a rate which cannot be controlled by the first means and to permit exact rate control by combining the first rate control means which controls the power to be supplied to an evaporating source and means having the shorter response time than the response time of said means.
CONSTITUTION: This vacuum deposition device is combined with the first rate control means 3 for controlling the power to be supplied to the evaporating source 2 of the device and the second rate control means 11 and makes vapor deposition on a material for vacuum deposition by electron beam vacuum deposition or resistance heating vacuum deposition. The above-mentioned control means 11 makes response in the time shorter than with the above-mentioned means 3 like a mechanical shutter mechanism provided between the vacuum deposition source 2 and the material for vacuum deposition.
| JPH04168269 | SPUTTERING SYSTEM |
| WO/2005/059197 | METHOD AND DEVICE FOR MAGNETRON SPUTTERING |
ENDO TETSURO
WAKITANI MASAYUKI
SATO KIYOTAKE
| JPS619574A | 1986-01-17 |
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